Faccio
Federico
EP-ESE
WP Leaders

Federico Faccio is the leader of the CERN Microelectronics section. He received the M.S. degree in physics from the University of Turin, Italy  (1991) and the Ph.D. degree from INPG in Grenoble, France (1997). At CERN since 1991, he has been mainly involved in the study of the radiation effects on semiconductor technologies and the design of radiation-hard ASICs. He recently led the CERN development of radiation and magnetic field tolerant DCDC converters. He has authored and co-authored more than 100 technical papers in journals and conference proceedings, receiving awards at the NSREC, RADECS and ECCE conferences.